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  Global Journal of Physical Chemistry. Volume 1, Issue 1 (2010) pp. 36-58
  Review Article
Silicon Nanowires: Growth Mechanisms and Synthesis Routes
  Maria Dimitrakopoulou*, Bernd Büchner, Mark H. Rümmeli*  

Leibniz Institute for Solid State and Materials Research (IFW), Helmholtzstraße 20, D-01069, Dresden (Germany) ; Technische Universität Dresden, D-01062, Dresden (Germany).


Semiconducting nanostructures are considered among the most important building blocks in the field of nanotechnology. Both their unique properties and potential applications as building blocks for the development of a variety of electronic, photonic, sensing, photovoltaic and energy storage devices have been investigated. In particular, silicon nanowires have gained tremendous attention due to their compatibility with current silicon-based microelectronics. This review focuses on the description of the methods used to synthesize silicon nanowires and the growth mechanisms involved in their synthesis using a range of systems under different reaction conditions. The synthetic approaches to fabricate silicon nanowires include bottom-up and top-down techniques. Bottom-up approaches comprise several different methods, such as chemical vapour deposition, laser ablation, thermal evaporation, molecular beam epitaxy, solution-based routes and less conventional techniques, such as electrodeposition and floating zone techniques. Top-down techniques can also be used to produce silicon nanowires either horizontally or vertically located at certain positions using nanolithography or micromachining processes. In addition, recent theoretical models and calculations relating to the growth mechanisms are also discussed.  

  Silicon nanowires; growth mechanisms; synthesis methods  

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