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  Global Journal of Physical Chemistry. Volume 2, Issue 2 (2011) pp. 145-148
  Research Article Free Article
A silicon monolayer on Ag(111)
  Abdelkader Karaa,b, Hanna B. Enriquezc, Sébastien Vizzinid, Benedicte Ealete, Bernard Aufraye, Hamid Oughaddouf  
a Department of Physics, University of Central Florida, Orlando FL 32816, USA
b Département de Physique, Université de Cergy-Pontoise, F-95031 Cergy-Pontoise cedex, France
c Commissariat à l’Energie Atomique, Laboratoire Surfaces et Interfaces de Matériaux Avancés associé à l’Université de Paris-Sud/Orsay, DSM-DRECAM-SPCSI, Bâtiment 462, Saclay, 91191 Gif sur Yvette Cedex, France
d Université Paul Cézanne Aix-Marseille III, Faculté des Sciences et Techniques, Avenue Escadrille Normandie NiemenCase 142, 13397 Marseille Cedex 20, France
e CINaM-CNRS, Campus de Luminy, Case 913, F-13288 Marseille Cedex 09, France
f Institut des Sciences Moléculaires d'Orsay, ISMO-CNRS, Université Paris-Sud, 91405 Orsay, France;
Départment de physique, Université de Cergy-Pontoise 33, boulevard du Port - 95011 Cergy-Pontoise cedex, France

  Using density functional theory, we have examined the adsorption of a mono-layer of silicon on Ag(111). A (4x4) super-structure is found to be stable and rippled with Si atoms occupying three levels with a maximum corrugation of 0.8Å. A detailed analysis of the bond angles for all possible configurations showed a range spanning from 320° to 355° reflecting a mixed sp2 and sp3 hybridization.
  Silicon; Silicene; Graphene; Metal surfaces; Semi-conductors; Adsorption  

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