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  Global Journal of Physical Chemistry. Volume 2, Issue 2 (2011) pp. 119-124
  Research Article Free Article
Structural and optical properties of RF sputtered SixC1-x thin films
  Abdel-ilah El Khalfi, El Maati Ech-chamikh, Youssef Ijdiyaou, Mustapha Azizan, Abdelhadi Essafti  
Solid State Physics and Thin Films Laboratory, Faculty of Sciences Semlalia, Cadi Ayyad University, PO Box: 2390, Marrakech 4000, Morocco
  Silicon carbide (SixC1-x) thin films with various Si/C ratio values have been deposited by radio frequency (RF) co-sputtering. These films were deposited, at different RF powers, from a composite target consisting of Si fragments regularly distributed on the surface of a pure graphite target. The surface covered by the Si fragments is about 33% of the total target surface. Structural properties, of the as-deposited thin films, have been studied by X-ray Diffraction (XRD) technique. Optical properties (especially the refractive index, absorption coefficient and optical band gap) were investigated by optical transmission measurements in the Ultraviolet-Visible-Near Infrared (UV-Vis-NIR) wavelengths range. XRD diagrams show that all the as-deposited SixC1-x thin films are amorphous. The deposition rate of these films, deduced from optical transmission measurements, increases quasi-linearly with the RF power. For the explored RF powers range, the Tauc's optical band gap Eg decreases between 2.1 and 1.9 eV when the RF power is increased from 150 to 350 W. Moreover, the refractive index follows well the Cauchy law with an extrapolated value, in the infinite wavelength region, which increases from 2.2 to 2.45 with RF power.
  RF sputtering; Optical properties; Silicon carbides; Optical band gap; Refractive index; Absorption coefficient  

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