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Global Journal of Physical Chemistry. Volume 2, Issue 2 (2011) pp. 241-245
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Research Article
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Free Article
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Photoreflectance analysis of diluted GaAsBi alloy
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I. Zaied, H. Fitouri, Z. Chine, A. Rebey, B. El Jani
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Unité de Recherche sur les Hétéroépitaxies et Applications, Faculté des Sciences de Monastir, 5000- Monastir, Tunisia
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Abstract |
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Diluted GaAsBi alloy grown by Atmospheric Pressure Metal Organic Vapor Phase Epitaxy (AP-MOVPE) was investigated by Photoreflectance spectroscopy (PR) and High Resolution X-Ray Diffraction (HRXRD) techniques. Layer thickness and Bi composition were determined by simulating (004) diffraction curves. PR experiments were carried out at different temperatures. By analyzing the Franz-Keldysh oscillations in PR spectra, optical transitions, electric field and broadening parameters were found. In the temperature range of 100 - 300 K, the energy gap variation is of about - 0.3 meV/K which is lower than that of GaAs (-0.4 meV/K). This behavior makes GaAsBi alloys of particular interest in the manufacturing of temperature insensitive wavelengths devices.
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Keywords |
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GaAsBi; Photoreflectance; Insensitive-temperature band gap
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