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  Global Journal of Physical Chemistry. Volume 2, Issue 2 (2011) pp. 241-245
  Research Article Free Article
Photoreflectance analysis of diluted GaAsBi alloy
  I. Zaied, H. Fitouri, Z. Chine, A. Rebey, B. El Jani  
Unité de Recherche sur les Hétéroépitaxies et Applications, Faculté des Sciences de Monastir, 5000- Monastir, Tunisia
  Diluted GaAsBi alloy grown by Atmospheric Pressure Metal Organic Vapor Phase Epitaxy (AP-MOVPE) was investigated by Photoreflectance spectroscopy (PR) and High Resolution X-Ray Diffraction (HRXRD) techniques. Layer thickness and Bi composition were determined by simulating (004) diffraction curves. PR experiments were carried out at different temperatures. By analyzing the Franz-Keldysh oscillations in PR spectra, optical transitions, electric field and broadening parameters were found. In the temperature range of 100 - 300 K, the energy gap variation is of about - 0.3 meV/K which is lower than that of GaAs (-0.4 meV/K). This behavior makes GaAsBi alloys of particular interest in the manufacturing of temperature insensitive wavelengths devices.
  GaAsBi; Photoreflectance; Insensitive-temperature band gap  

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