creating knowledge for future

High Quality

Scholarly Publishing
                CAREER NETWORK  
World's one of the largest Research
Career Network
  •     Academic & Industry jobs
  •     Project funding
  •     Visiting faculty positions
  •     Visiting scientist positions
  •     Invited talks
  •     and more...  
Register FREE  
  Physics Express 2011, 1: 21
  Research Article
The microduty bipolar phototransistor on the base of gallium arsenic n-p-m-structure
  A.V. Karimova,, D.M. Yodgorovaa, O.A. Abdulkhaeva, J.T. Nazarovb  
a Physical-Technical Institute of the Scientific Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Bodomzor yoli st. 2B, 100084, Tashkent, Uzbekistan
b Navoi State Institute of Mines, Yujnaya st. 27a, 210100, Navoi, Uzbekistan

  In the present paper, the results of the research on light characteristics of gallium arsenic two-barrier n-p-m-structure - analogue of bipolar phototransistor are presented. Experimentally, it is shown that photoelectric characteristics vary depending on switching on conditions of nGaAs-pGaAs-Ag structure. The researched structures differ with functionability in photodiode and phototransistor modes as microduty devices.
  Microconditions; Phototransistor; Two-base; Barrier; Photo-voltaic effect  

  © 2016 Cognizure