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  Physics Express 2011, 1: 22
  Research Article
 
Slow light using InGaAsP semiconductor quantum dot systems
  M. K. Al-Khakania, K. H. Al-Mossawib, Amin H. Al-Khursanc  
     
a Physics Department, Science College, Babylon University, Hillah, Iraq b Physics Department, Science College, Al-Mustansiriyah University, Baghdad, Iraq c Physics Department, Science College, Thi-Qar University, Nassiriya, Iraq
   
  Abstract  
  InGaAs/In1-xGaxAs1-yPy/InP QD system is used to study slow-light. This includes the study of structures with different WLs and QD sizes. This choice takes into account covering their emitted wavelengths (1.3-1.5µm). In addition to this, Effect of different parameters like: linewidth, de-phasing rate and pump-power is studied on the linear absorption, refractive index, and then on slow-light. The storage time of the proposed buffer is studied. While it is shown that these structures needs a low pump power to get the required slow down, it is found that reducing In content gives lower slow-down factor. A storage time adequate for all-optical communication devices is obtained.
     
  Keywords  
  Quantum dot QD; Slow light; Electromagnetic induced transparency EIT; Absorption; Refractive index; Storage time  
     
   
   
   
   
     

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