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  Physics Express 2012, 2: 5
  Research Article
Femtosecond laser induced formation and crystallization of Si nanoclusters in SiOx films
  V.A. Volodina,b, T.T. Korchaginaa, A.K. Gutakovskya, L.I. Fedinaa, M.A. Neklyudovaa,b, A.V. Latysheva,b, J. Jedrzejewskic, I. Balbergc, J. Kochd, B.N. Chichkovd  
a A.V.Rzhanov Institute of Semiconductor Physics SB RAS, Lavrent’eva ave., 13, 630090, Novosibirsk, Russia
b Novosibirsk State University, Pirogova street, 2, 630090, Novosibirsk, Russia
c Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
d Laser Zentrum Hannover, Hollerithallee 8, 30419 Hannover, Germany

  A femtosecond pulse laser irradiation (Ti-sapphire laser, 800 nm wavelength, <30 fs pulse duration) was applied for treatment of SiOx films of various stoichiometry. The as-deposited and treated films were studied using Raman spectroscopy and electron microscopy techniques. The laser assisted formation of amorphous Si nanoclusters in SiOx films with stoichiometry parameter x close to 2 were observed. We found laser fluence for crystallization of amorphous Si nanoclusters in SiOx films with stoichiometry parameter x < 2. The approach we developed can be used for the modification of size and phase composition of Si nanoclusters in SiOx films that were deposited on various substrates.
  Silicon nanoclusters; Laser pulse annealing; Raman scattering; SiOx films  

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