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  Physics Express 2012, 2: 25
  Research Article
 
Dielectric confinement on exciton binding energy and optical absorption coefficients and refractive index changes in a wide ZnSe/ZnMgSe single quantum well
  P. Elangovana, A. John Peterb  
     
a Department of Physics, Chennai Institute of Technology, Sarathy Nagar, Nandhambakkam (Post), Kundrathur, Chennai-600 069, India
b Department of Physics, Government Arts College, Melur-625 106, Madurai, India

   
  Abstract  
  Binding energy of a confined heavy hole exciton is investigated in a Zn1-xMgxSe/ZnSe/Zn1-xMgxS quantum well, considering the effect of dielectric confinement, for the Mg alloy content (x) ranging from 0.2 to 0.6. The interband emission energy as a function of well width is calculated for various Mg concentrations. The exciton oscillator strength and the exciton lifetime for radiative recombination as a function of well width are computed. Optical properties are carried out using the compact density matrix approach. The dependence of nonlinear optical processes on the well width is investigated for different Mg concentrations. The exciton radiative lifetime strongly depends on the well width and reaches thousands of picoseconds. The linear, third order non-linear optical absorption coefficients, susceptibility values and the refractive index changes of the exciton are calculated for different concentrations of magnesium content. It is found that the incorporation of magnesium ions has great influence on the optical properties of ZnSe/Zn1-xMgxSe quantum wells.
     
  Keywords  
  Interband emission energy; Optical absorption; Quantum well  
     
   
   
   
   
     

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