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  Physics Express 2013, 3: 6
  Research Article
Studies on the structural, optical and electrical properties of Ga doped ZnO thin films grown by buffer assisted pulsed laser deposition
  R. S. Ajimsha, A. K. Das, P. Misra, L. M. Kukreja  
Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India
  This study addresses the structural, electrical and optical properties of Gallium doped zinc oxide (Ga:ZnO) thin films with Ga concentration in the range of ~ 0.25 -3 % grown on (0 0 0 1) sapphire substrate by buffer assisted pulsed laser deposition. The main focus was to achieve lowest resistivity and maximum carrier mobility with high transparency for visible and particularly near IR light suitable for transparent conducting electrode applications in photovoltaic devices. High resolution x-ray diffraction studies confirmed the growth of Ga:ZnO thin films with preferential orientation in the (0 0 0 2) direction. The electrical characterization results show that the resistivity of Ga:ZnO thin films decreased to a minimum value with increasing Ga concentration up to ~ 0.75 at%, then increased with the further increase of Ga concentration. Lowest resistivity of ~ 6.4 x 10-5 Ocm with good carrier mobility of ~ 41.3 cm2/Vs at ~ 0.75 at% Ga doping in ZnO. On the contrary, the band gap and carrier concentration of Ga:ZnO thin films initially increased with increasing Ga concentration up to ~ 0.75 at%, then decreased with further increase of Ga concentration. The blue shift of band gap of Ga:ZnO thin films with increasing carrier concentration was attributed to the competing effects of Burstein-Moss (BM) shift and band gap narrowing. A rare combination of high transparency in the visible region, low resistivity and reasonably good mobility of Ga doped ZnO has immense potential in transparent conducting oxide applications.
  ZnO; Pulsed laser deposition; Thin film; Transparent conducting oxides  

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