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  Physics Express 2013, 3: 5
  Research Article
 
Structural, electrical and optical characteristics of Al doped ZnO films grown by sequential pulsed laser deposition
  Amit K. Dasa, P. Misraa, A. Boseb, S. C. Joshib, R. Kumarc, T. K. Sharmac, L. M. Kukrejaa  
     
a Laser Material Processing Division, Raja Ramanna Center for Advanced Technology, Indore - 452 013, India
b Proton Linac & Superconducting Cavities Division, Raja Ramanna Center for Advanced Technology, Indore - 452 013, India
c Semiconductor Laser Section, Raja Ramanna Center for Advanced Technology, Indore - 452 013, India

   
  Abstract  
  Sequential Pulsed Laser Deposition technique was used to grow highly transparent and c-axis oriented Al doped ZnO thin films on sapphire substrates. On doping with Al, resistivity of the virgin ZnO thin films was found to decrease from ~ 4.8×10-2 to 2.4×10-4 ohm-cm and its bandgap increased from about 3.28 to 3.63 eV at different doping concentrations. Increase in the bandgap of the ZnO films with increasing Al concentration was found to be due to the collective effects of high carrier concentration induced Burstein-Moss blue shift and bandgap narrowing. Metal to semiconductor transition was also observed in the temperature dependent resistivity measurements. Efficient photoluminescence (PL) was observed at room temperature from these Al doped ZnO films. The characteristics of the Al doped ZnO thin films grown by sequential pulsed laser deposition is comparable to the films grown by normal ablation of alumina mixed ZnO pellet. The AZO films are suitable for transparent conducting electrodes applications.
     
  Keywords  
  ZnO; Sequential Pulsed laser deposition; Thin film  
     
   
   
   
   
     

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