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  Physics Express 2013, 3: 4
  Research Article
 
Impedance studies on oxygen ion irradiated PZT thin films
  Basavaraj Angadia, V. M. Jalib, Ravi Kumarc, S. B. Krupanidhid  
     
aDepartment of Physics, Bangalore University, Bangalore – 560 056, India
b Department of Physics, Gulbarga University, Gulbarga – 585 106, India
c Department of Materials Science & Engineering, National Institute of Technology, Hamirpur – 177 005, India
d Materials Research Centre, Indian Institute of Science, Bangalore – 560 012, India

   
  Abstract  
  Impedance spectroscopy was used to study the effects of 70 MeV oxygen ion irradiation on ferroelectric Pb(Zr0.48Ti0.52)O3 (PZT) thin films prepared by the pulsed laser deposition. The impedance and modulus plots of the unirradiated films reveal that the Debye peaks shift to higher frequencies with the increase in temperature due to the well-known dielectric relaxation mechanism. After oxygen ion irradiation, Debye peaks shift towards lower frequency compared to those of unirradiated films indicating ion beam induced modifications in dielectric relaxation. The grain resistance estimated from the complex impedance plots was observed to be increased after irradiation. The activation energy of dielectric relaxation increases with irradiation and show fluence dependant increase. The observed modifications in the irradiated films were ascribed to the modifications in the grain structure due to the high value of electronic energy loss.
     
  Keywords  
  Ferroelectric thin films; Lead Zirconate Titanate; Pulsed laser deposition; Ion irradiation; Impedance spectroscopy  
     
   
   
   
   
     

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