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  Physics Express 2013, 3: 10
  Research Article
Studies on the electrical characteristics of n-ZnO/p-Si grown by pulsed laser deposition for UV photo detecting applications
  Vikas K. Sahua, D. Sahaa, Amit. K. Dasa, R. S. Ajimshaa, M. K. Singhb, P. Misraa, L. M. Kukrejaa  
a Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India
b Laser Materials Development and Device Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India

  The n-ZnO/p-Si heterostructures were fabricated using optimized pulsed laser deposition for ultra-violet (UV) photodetecting applications. About 500 nm thick films of ZnO were grown on p-Si (100) substrates at 400° C and in oxygen ambience at a partial pressure of ~ 1×10-4 Torr. Powder X-ray diffraction studies revealed highly c-axis oriented growth of ZnO on (100) p-Si substrate. Atomic force microscopy showed presence of hexagonal ZnO crystallites having mean size varying from 100-200 nm. Photoluminescence studies revealed strong UV photoluminescence corresponding to ZnO band edge with negligibly small photoluminescence in visible spectral region. The n-ZnO/p-Si heterojunction showed typical diode characteristics in dark with low reverse saturation current (~ 10-5 A) and rectification factor of ~ 3. Significant enhancement in the photocurrent in both reverse and forward bias conditions were observed on illumination with the UV light. Spectral response of the detector showed negligible responsivity at visible light compared to higher responsivity at UV light with photon energies greater than the ZnO bandgap, indicating visible blind nature of the n-ZnO/p-Si heterostructure photodetector.
  n-ZnO/p-Si heterojunction; Pulse laser Deposition (PLD); UV-Photodiode; Diode Ideality; Spectral Photoresponsivity  

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