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Physics Express 2013, 3: 32
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Research Article
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Investigation of LaxCeyOz as a high-dielectric constant metal reactive oxide on Si substrate
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Way Foong Lim, Zainovia Lockman, and Kuan Yew Cheong
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Electronic Materials Research Group, School of Materials & Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia
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Abstract |
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Lanthanum cerium oxide (LaxCeyOz) has been successfully spin-coated on Si substrate with post-deposition annealed from 400 to 1000°C for 15 min in argon ambience. X-ray diffraction has detected the presence of LaxCeyOz phases oriented in (200), (220), (311), and (222) planes and field emission scanning electron microscopy revealed a smooth surface in all of the samples. Grain size of LaxCeyOz film determined using Williamson-Hall method increased with the increase of annealing temperature. Leakage current density-gate voltage (J-V) and capacitance-voltage measurements showed that the highest breakdown voltage was obtained by sample annealed at 1000°C, corresponding to the acquisition of the lowest effective oxide charges, the smallest interface trap density, and total interface trap density.
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Keywords |
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High dielectric constant; Lanthanum cerium oxide; Post-deposition annealing; Metal-organic decomposition; Metal-oxide-semiconductor
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