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  Journal of Nanoscience Letters 2012, 2: 13
  Review Article
 
Random-network carbon nanotube thin-film transistors
  Jason L. Juhalaa, Nathan H. Piccolab, Pengfei Lib, Wei Xueb  
     
a Electrical Engineering, b Mechanical Engineering, School of Engineering and Computer Science, Washington State University, 14204 NE Salmon Creek Avenue, Vancouver, WA 98686, USA
   
  Abstract  
  Carbon nanotubes (CNTs) have unique geometric structures and remarkable electrical properties, making them a promising candidate for future nanoelectronics. The development of thin-film transistors (TFTs) usingCNT random networks has attracted considerable attention in the past few years. Although these devices have relatively higher device-to-device performance variation compared with aligned nanotube-based transistors, they can be fabricated using commercially available CNT products, resulting in a final device product with much lower costs. This article reviews the common deposition methods used in the fabrication of such devices. The developed experimental approaches are described and discussed; the electrical characteristics including mobilities and on/off ratios of some key CNT transistors are summarized. These devices have been successfully used in a variety of applications, especially in digital integrated circuits and sensors. Even though many challenges remain, new devices with higher performance can be anticipated in the near future due to the fast progress in CNT research.
     
  Keywords  
  Carbon nanotube; Thin-film transistor; Random network;Mobility; On/off ratio; Integrated circuit  
     
   
   
   
   
     

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