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  Journal of Nanoscience Letters 2013, 3: 15
  Research Article
Spin injection device based on Co2MnSi/MgO/NbN heterostructure
  D. Kumara, P. C. Joshia, Z. Hossaina, R. C. Budhania,b  
a Condensed Matter Low Dimensional Systems Laboratory, Department of Physics, Indian Institute of Technology Kanpur, Kanpur – 208016, India
b National Physical Laboratory, New Delhi – 110012, India

  We report the spin-polarized current injection (SPCI) experiments carried out in a cross line geometry, where the spin-polarized current (IS) is injected into a 25 µm wide superconducting NbN bridge from a ferromagnetic Co2MnSi layer by tunneling through MgO barrier. The SPCI measurements show a large suppression of superconducting critical current (IC) due to the injection of IS. A large dynamic gain of ~36 has been observed at 3 K in the SPCI device. Such a high gain suggests a dominating role of SPCI effect in IC suppression as compared to the effect of Joule heating.
  Spin-polarized current injection device; IC suppression; Dynamic gain  

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