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  Journal of Nanoscience Letters 2013, 3: 24
  Research Article
Room-temperature light-emitting diodes by using randomly distributed n-ZnS nanowires/p-SiC heterojunction
  Hui Ying Yanga, De Hui Lib, Siu Fung Yuc, JI. Wonga, Qi Hua Xiongb,d  
a Pillar of Engineering Product Development, Singapore University of Technology and Design, Singapore 138682
b Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
c Departments of Applied Physics, The Hong Kong Polytechnic University, Hung Hum, Kowloon, Hong Kong
d Division of Microelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

  A light-emitting heterojunction diode was realized by randomly growth of n-ZnS nanowires, which were synthesized in a home-built vapor transport system, on a p-type SiC substrate. The heterojunction exhibits diode-like rectifying voltage-current behavior with turn-on voltage and reverse bias leakage current equal to ~7 V and = 30 μA respectively. Emission bands with peak wavelengths of ~406, ~478 and ~573 nm are also measured from the room-temperature electroluminescence spectra. These emission bands are related to radiative recombination between electrons from donor levels and holes from either valence band or acceptor level of the ZnS nanowires.
  ZnS nanowires; Electroluminescence; Light-emitting diodes  

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