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  Sci. Lett. J. 2012, 1: 1  
  Research Article
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A competitive diffusion of titanium and palladium atoms in Ti/Pd/Si and Pd/Ti/Si annealed ternary systems  
  A. H. Hammoudia, C. Benazzouza, C. A. Pineda-Vargasb, M. Nkosib  
a Centre de Recherche Nucleaire d_Alger, CRNA, 2 Bd Frantz Fanon, 16000 Algiers, Algeria
b Materials Research Departement, iThemba LABS, P. O. Box 722, Somerset West, 7129, Cape town, South Africa

  Multilayered pure titanium and palladium films were evaporated alternatively on (1 0 0) monocristalline silicon substrates. Annealing, in a furnace vacuum, was carried out at temperatures ranging from 700 up to 950°C, for 30 min. The obtained samples were analyzed by means of Rutherford backscattering spectrometry, X-ray diffraction and scanning electron microscopy techniques. The interdiffusion of the different elements all with the enhanced transformations occurring at Pd/Ti and Ti/Si interfaces has been investigated.  
  Titanium; Palladium; Silicon; Silicides; Morphology; Backscattering spectrometry; Scanning electron microscopy; X-ray diffraction  
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