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  Sci. Lett. J. 2012, 1: 12  
  Research Article
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Effect of dual treatment based on porous silicon and sputter-deposited TiO2 doped Cr film on the optoelectronic properties of monocrystalline Si  
  A. Hajjajia,b, M. Ben Rabhaa, N. Janenea, W. Dimassia, B. Bessaisa, M. A. El Khakanib, M. Gaidia  
a Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
b Institut National de la Recherche Scientifique, INRS-Énergie, Matériaux et Télécommunications, 1650, Blvd. Lionel-Boulet, Varennes, Québec, Canada J3X 1S2

  In this paper, we report on the use of a double treatment based on porous silicon and Cr-doped TiO2 sputter-deposition, as a novel passivation technique for monocrystalline Si (c-Si). The passivation and antireflection properties of these treatments were investigated. In particular, effect of Cr doping concentration (in the 0-17 at. % range) on the optoelectronic properties of c-Si was investigated. It is particularly found that the PS/TiO2 (2 at. % of Cr) treated samples present high photoluminescence (PL) intensity and an enhancement of the optoelectronic properties of the c-Si material with respect to other Cr doping concentrations. Consequently the total reflectivity, in the 350 - 700 nm wavelength range, decreases from 35% for untreated c-Si to about 13% after PS/TiO2 treatment and the effective minority carrier diffusion length of the c-Si was enhanced from 181 µm to 340 µm after combining porous silicon and Cr-doped titanium dioxide deposition.  
  Porous silicon; Titanium dioxide; Cr doped TiO2; RF magnetron sputtering; C-Si passivation; Photoluminescence  
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