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Sci. Lett. J. 2012, 1: 13
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Research Article
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Full Text
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Effect of double treatment based on porous Si and TiO2 passivation on the optoelectronic properties of multicrystalline silicon substrates
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N. Janenea, A. Hajjajia,b, M. Ben Rabhaa, B. Bessaisa, M. A. El Khakanib, M. Gaidia
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a Photovoltaic Laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park,
BP 95, 2050 Hammam-Lif, Tunisia
b Institut National de la Recherche Scientifique, INRS-Énergie, Matériaux et Télécommunications,
1650, Blvd. Lionel-Boulet, Varennes, Québec, Canada J3X 1S2
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Abstract |
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In this paper, we propose a novel passivation technique for multicrystalline silicon (mc-Si) wafers intended for solar cell applications. The new method combines the use of double treatment based on porous Si and TiO2 passivation coating. Porous silicon (PS) was prepared by electrochemical anodization. TiO2 nanoparticles were incorporated inside pores by the way of the pulsed laser deposition (PLD) technique with a thickness varying from 0.5 to 80 nm. The obtained nanocomposites were investigated for its passivation and antireflection properties. The combined treatment based on TiO2/PS minimizes the average reflectivity from 30% for bare multicrystalline silicon to around 6% for the treated one. Depending on the TiO2 nominal thickness a strong enhancement is observed on the photoluminescence intensity and on the effective minority carrier lifetime. As a consequence the effective minority carrier lifetime is improved from 2 μs for untreated sample to 319 μs after 0.5 nm TiO2/PS treatment. A clear correlation between surface morphology evolution changes after each process and the minority carrier lifetime improvement is observed.
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Keywords
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Multicrystalline silicon; Porous silicon; Titanium dioxide; Lifetime minority carriers; Pulsed laser deposition
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