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  Sci. Lett. J. 2012, 1: 14  
  Research Article
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An alternative explanation for the effect of Ge content on the density of end-of-range defects found in ion implanted relaxed SiGe alloys  
  A. Belafhailia, L. Laânaba, P. F. Fazzinib, F. Cristianob, N. Cherkashinc, G. Benassayagc, A. Claveriec  
a LCS, Faculty of Sciences, Mohammed V University, Rabat, Morocco
b LAAS/CNRS, 7 Av de Col Roche 31077, Toulouse Cedex, France
c CEMES/CNRS and Université de Toulouse, BP 4347, F-31055 Toulouse Cedex, France

  This work presents a study of an influence of the Ge content in relaxed SiGe alloys on the populations of end-of-range defects created by amorphizing ion implantation and annealing. For this, several relaxed layers of the alloy with variable Ge concentrations were grown by chemical vapor deposition, preamorphized by Ge+ ion implantation, and subsequently annealed at 680°C. Identification of the defect types was realized by transmission electron microscopy under appropriate imaging conditions. These defects mostly consist of small (~ 10 nm long) interstitial {113} defects. Their density decreases along with the total number of atoms they contain for increasing Ge contents. Comparing our data with Monte Carlo simulations, we conclude that this effect for increasing Ge contents can be, for a large part, explained by the decrease of an excess of interstitials generated during amorphization beneath the crystal to amorphous (c/a) interface and by the increased diffusivity of self-interstitials in SiGe alloys.  
  Ion implantation; Amorphization; End-of-range defects; TEM; Monte Carlo simulation; Interstitials  
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